AMORPHOUS BORON NITRIDE THIN FILM DOPED WITH TERBIUM ION

摘要

PROBLEM TO BE SOLVED: To provide a thin film for novel highly luminous light-emitting elements which is a substitute for RE-Si, RE-GaN, RE-AlN or RE-Si3N4(wherein RE is a rare earth element). SOLUTION: A trivalent-terbium-ion (Tb3+)-doped amorphous boron nitride (BN) light-emitting thin film that enables a visible light emission about the central wavelength of 547 nm or a near-infrared light emission about the center wavelength of 1.3μm is provided. The thin film is produced by sputtering a target being a terbium polyboride represented by TbBn(wherein n is in the range: 4≤n≤100) in an atmosphere formed by adding nitrogen (N2) or ammonia (NH3) to argon. COPYRIGHT: (C)2003,JPO