发明名称 |
Thermoelectric device with Si/SiC superlattice N-legs |
摘要 |
A superlattice thermoelectric device. The device is comprised of p-legs and n-legs, each leg being comprised of a large number of at least two different very thin alternating layers of elements. The n-legs in the device are comprised of alternating layers of silicon and silicon carbide. In preferred embodiments p-legs are comprised of a superlatice of B-C layers, with alternating layers of different stoichiometric forms of B-C. This preferred embodiment is designed to produce 20 Watts with a temperature difference of 300 degrees C. with a module efficiency of about 30 percent. The module is about 1 cm thick with a cross section area of about 7 cm2 and has about 10,000 sets of n and p legs each set of legs being about 55 microns thick and having about 5,000 very thin layers (each layer about 10 nm thick).
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申请公布号 |
US2003111660(A1) |
申请公布日期 |
2003.06.19 |
申请号 |
US20010021097 |
申请日期 |
2001.12.12 |
申请人 |
GHAMATY SAIED;ELSNER NORBERT B. |
发明人 |
GHAMATY SAIED;ELSNER NORBERT B. |
分类号 |
H01L29/15;H01L35/22;H01L35/32;(IPC1-7):H01L29/06;H01L21/00 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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