COPPER ELECTROPLATING METHOD, PURE COPPER ANODE FOR COPPER ELECTROPLATING, SEMICONDUCTOR WAFER PLATED BY USING THESE AND LESS DEPOSITED WITH PARTICLE

摘要

PROBLEM TO BE SOLVED: To provide a copper electroplating method for a semiconductor wafer which prevents the deposition of particles to the semiconductor wafer by suppressing the generation of the particles of the sludge, etc., produced on an anode side in a plating solution in performing copper electroplating, a pure copper anode for copper electroplating and a semiconductor wafer which is plated by using these and is less deposited with the particles. SOLUTION: The copper electroplating method comprises performing copper electroplating by using pure copper as the anode and using the anode regulated in the crystalline grain size of the pure copper anode to≤10μm or≥60μm or unrecrystallized in performing the copper electroplating. COPYRIGHT: (C)2003,JPO