METHOD FOR FORMING MASK PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a mask pattern of a semiconductor device is provided to be capable of simplifying processes and reducing manufacturing costs by forming double mask pattern using a single mask process. CONSTITUTION: A reticle(100) having a semi-transparent layer(20) and a light shielding layer is formed on a transparent insulating substrate. The first resist layer(19a) having a relatively low photo sensitivity and the second resist layer(19b) having a relatively high photo sensitivity, are sequentially formed on a wafer. By irradiating light to the wafer via the reticle(100), the first and second resist layer(19a,19b) are selectively exposed. The first and second resist pattern are formed by developing the exposed first and second resist layer(19a,19b).