| 摘要 |
PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to prevent the edge of the isolation layer from being recessed in a cleaning process by forming the isolation layer after a predetermined thickness of a nitride layer is recessed. CONSTITUTION: A stack structure of a pad oxide layer pattern(104) and a nitride layer pattern(106) that define an active region is formed on a semiconductor substrate(101). The semiconductor substrate is etched to form a trench(107) by using the nitride layer pattern as an etch mask. A predetermined thickness of the nitride layer pattern is recessed to expose the edge of the active region. A buried insulation layer is formed on the resultant structure. The buried insulation layer is removed through a chemical mechanical polishing(CMP) process to form the isolation layer for dividing the active region wherein the edge of the isolation layer is formed on the active region. The nitride layer pattern is eliminated. A cleaning process is performed to remove the pad oxide layer pattern and a predetermined thickness of the isolation layer.
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