| 摘要 |
PURPOSE: A method for forming a copper line of a semiconductor device is provided to prevent a current concentration by forming a via hole of dual damascene, a barrier metal and a plug into the via hole, a trench of the dual damascene, and the barrier metal and an upper line into the via hole. CONSTITUTION: The first interlayer dielectric(100) is formed on a semiconductor substrate. A lower line(104) is formed on the first interlayer dielectric. The first diffusion barrier(106), the second interlayer dielectric(108,110), and the second diffusion barrier(112) are formed on the resultant. A via hole is formed by etching the second diffusion barrier and the first diffusion barrier. The first barrier metal is formed on a sidewall of the via hole. A plug(120) is formed by burying copper into the via hole. The third interlayer dielectric is formed on the resultant. A trench is formed by etching the third interlayer dielectric. The second barrier metal is formed on a sidewall of the trench of the third interlayer dielectric. An upper line(128) is formed by burying the copper or copper alloy into the trench.
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