| 摘要 |
PURPOSE: An X-ray detector and a fabricating method thereof are provided to simplify a fabrication process by removing a process for forming an organic insulating layer on the first protective layer and a process for forming a buffer layer at a lower portion of a pad electrode. CONSTITUTION: An X-ray detector includes a gate line(251), a gate connection line, a gate pad electrode(234), a data line(252), a data connection line, a data pad electrode(253), a TFT, a ground line(254), the first protective layer, a capacitor electrode(268), the first gate pad terminal electrode(270), a pixel electrode, the second protective layer, the second gate pad terminal electrode(292), a data pad contact hole, and a ground pad contact hole. The TFT includes a gate electrode(232), an active layer, a source electrode(248), and a drain electrode. The ground line is connected to a ground pad electrode(255). The first protective layer is formed with a silicon insulating layer. The capacitor electrode is connected to the exposed ground line. The first gate pad terminal electrode is connected to the exposed gate pad electrode. The second protective layer is used for exposing partially the drain electrode and the first gate pad terminal electrode. The pixel electrode is connected to the drain electrode. The second gate pad terminal electrode is connected to the first gate pad terminal electrode. The data pad contact hole is used for exposing the data pad electrode. The ground pad contact hole is used for exposing the ground pad electrode.
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