| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to be capable of maximizing contact alignment margins and reducing contact resistance by forming a pad after increasing the area of opening part. CONSTITUTION: A gate electrode(34) and a capping layer(35) are sequentially formed on a semiconductor substrate(31). An insulating spacer(36) is formed at both sidewalls of the gate electrode. After depositing an insulating layer(37) on the resultant structure, the first contact holes are formed by selectively etching the insulating layer. A bit line and storage node contact plug(38a,38b) are formed in the first contact holes. The area of the opening parts located on the contact plugs are increased by partially etching the insulating layer(37) and etch-back of the capping layer(35). A bit line and storage nod pad(40a,40b) having a relatively large area are formed in the opening parts. Then, the second contact holes are formed to expose the pads via an interlayer dielectric.
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