| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to be capable of restraining defects generated at edges of a field oxide and dark current due to dangling bonds and preventing blooming and crosstalk between unit pixels. CONSTITUTION: A p- epitaxial layer(22) is formed on a p+ substrate(21). A field oxide layer(24) is formed at a desired portion of the p- epitaxial layer(22). A gate electrode(26) having a gate spacer(31) is formed on the p- epitaxial layer. An n- diffusion layer having a channel region is formed in the epitaxial layer to align one edge of the gate electrode(26) and the field oxide layer(24). A p0 diffusion layer(33) is formed in the n- diffusion layer to align one edge of the gate spacer(31). An n+ floating diffusion layer(35) is formed in the epitaxial layer to align the other edge of the gate spacer(31). Charges stored in the n- diffusion layer are transferred to the n+ floating diffusion layer(35).
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