| 摘要 |
PURPOSE: A method for forming a metal line using dual damascene processing is provided to be capable of preventing the degradation of devices by entirely removing a nitride layer as an etch stop layer. CONSTITUTION: An oxide layer, a low-permittivity oxide layer and a nitride layer are sequentially formed on a lower metal line(21). The nitride layer and the low-permittivity oxide layer are selectively etched using a via hole pattern mask. The nitride layer is etched using a line pattern mask. A via hole is then formed by etch-back of the nitride layer, the low-permittivity oxide layer and the oxide layer. At this time, the nitride layer is entirely removed. Then, an upper metal line(28) is formed on the resultant structure.
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