| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor memory device is provided to be capable of preventing the degradation of capacitors having a high aspect ratio by forming a TiN thin film using multi-step CVD processing. CONSTITUTION: In a method for manufacturing a capacitor of a semiconductor memory device using a TiN thin film as an electrode, the TiN thin film is formed by using multi-step CVD(Chemical Vapor Deposition) processing. In the CVD processing, mixed gases of TiCl4 and NH3 are used as a source gas. At this time, the flow rate of the TiCl4 and NH3 gas is controlled by 2 : 5.
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