| 摘要 |
PURPOSE: A method for forming a gate of a semiconductor device is provided to be capable of restraining the enhancement of the interface resistance between a tungsten film and a polysilicon layer. CONSTITUTION: A gate oxide layer(21), a polysilicon layer(22), a titanium nitride layer, a tungsten nitride layer(24) and a tungsten film(25) are sequentially formed on a substrate(20). By annealing the resultant structure, a native oxide layer is removed and a titanium silicide layer(26) of C-49 phase is simultaneously formed between the polysilicon layer(22) and the tungsten nitride layer(24). A gate(200) is formed by sequentially etching the tungsten film, the tungsten nitride layer and the titanium silicide layer using a hard mask(27) as a mask. A re-oxidation layer(28) is formed on the gate oxide layer(21) and at both sidewalls of the polysilicon layer(22) by selective oxidation processing.
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