Method for preparing silicon single crystal and silicon single crystal

摘要

In a method manufacturing a silicon single crystal 8 according to an MCZ method, a flow rate of an inert gas flowing in a growth furnace 1 during growth of the silicon single crystal 8 and/or a pressure in the growth furnace 1 is altered according to a pulling amount of the silicon single crystal 8 to adjust an interstitial oxygen concentration therein. By altering a flow rate of an inert gas flowing in the growth furnace or a pressure therein, an amount of oxygen evaporating as an oxide from a surface of a silicon melt 10 in the vicinity of a crystal growth interface can be easily adjusted, and thereby, an oxygen amount included in the silicon melt 10 can be controlled with ease.