Scanning capacitance sample preparation technique

摘要

Currently semiconductor processing and device manufacturing relies heavily on continued scaling of critical dimensions for cost reduction and performance enhancement. In order to continue this scaling below 0.1 micron with acceptable manufacturing yields, reliable measurement of electrical charge distribution and the placement of dopants is essential, yet no conventional technique exists to obtain distortion-free cross-sectional images. An aspect of the invention relates to a technique for forming a precisely-located, substantially atomically smooth cross-section of a crystalline sample suitable for Scanning Capacitance Microscopy analysis. Another aspect of the invention provides a method for deconvolving Scanning Capacitance raw data into an accurate representation of electrical carrier distributions suitable for the higher resolution attainable with the new sample preparation technique.