SUBSTRATE FOR GROWING EPITAXIAL FILM AND LAYERS OF GALLIUM NITRIDE

摘要

FIELD: electronic engineering; manufacture of information representation and processing units. SUBSTANCE: substrate is made from monosilicides of transition metals of period IV and solid solutions on their base for growth of epitaxial layers of gallium nitrides. Proposed materials ensure growth of large and perfect crystals at moderate temperatures and proper alignment of their lattices. EFFECT: improved quality of crystals.