| 摘要 |
PURPOSE:To obtain high sensitivity to KrF excimer laser and durability against oxygen plasma by constituting the compsn. of a specified resin and photo acid generating agent. CONSTITUTION:This compsn. is produced by adding one of sulfonium salts, sulfonate compds., iodonium salts, and halogenated compds. as a photo acid generating agent to a resin having a chemical structure of the formula. In the formula, R1 is H, an alkyl group, halogen, phenyl group, halogenated alkyl group or CN, R2 is a group which is released with acid. Since the content of Si in the compsn. (resist) can be increased, a thicker resist film as a lower layer can be etched to obtain a pattern with high aspect ratio. Thus, the obtd. compsn. can be used, for example, in a production process of semiconductor integrated circuit devices and micromachining process which require microfabrication. |
