| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method of the same, capable of contriving the miniaturization of a contact hole in a logic section and provided with an e-DRAM at high density. SOLUTION: A second interlayer insulation film 118 is formed on a base plate, and thereafter, a contact hole 119, reaching a conductor plug 111b and a conductor plug 111c, is formed. Then, a polysilicon film 121 is formed on the base plate. In this case, the contact hole 119 is filled with polysilicon film 121. Thereafter, an opening 124 is formed in the polysilicon film 121 and, thereafter, the etching of a second interlayer insulation film 118 is effected, employing the polysilicon film 121 as a mask to form a contact hole 125. Then, an adherence layer and a tungstenum film are formed on the base plate and, thereafter, a conductor plug 121a, consisting of a polysilicon film, and a conductor plug 122 which consists of an adherence layer and the tungsten film, are formed simultaneously by CMP. COPYRIGHT: (C)2003,JPO
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