发明名称 SOLUTION MATERIAL FOR METAL-ORGANIC CHEMICAL VAPOR DEPOSITION CONTAINING beta-DIKETONATE COMPLEX OF COPPER (II) AND COPPER THIN FILM FORMED USING THE SAME
摘要 PROBLEM TO BE SOLVED: To supply a material stably at the time of film deposition and to obtain a high purity copper thin film exhibiting excellent thermal stability in which the lifetime is prolonged by retarding decomposition under preservation state, and to obtain an MOCVD process in which an MOCVD system is not corroded easily, treatment of exhaust gas is not complicated and adhesion to an underlying film is enhanced. SOLUTION: In the solution material for metal-organic CVD produced by dissolvingβ-diketonate complex of copper (II) in an organic solvent, the organic solvent is one kind or more than one kind of compound selected from a group of n-methyl-2-pyrrolidone, dimethylaniline, di-t-butylaniline, di-n-butylaniline, diisopropylaniline, tri-t-butylaniline, and triisopropylaniline. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003257889(A) 申请公布日期 2003.09.12
申请号 JP20020053411 申请日期 2002.02.28
申请人 MITSUBISHI MATERIALS CORP 发明人 SAI ATSUSHI;OGI KATSUMI
分类号 C07C49/92;C07F1/08;C23C16/18;H01L21/285;(IPC1-7):H01L21/285 主分类号 C07C49/92
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