Memory cells and methods of making memory cells

摘要

Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.

主权项

1. A method of forming a memory cell, comprising:
forming a data storage region over a first conductive structure, the data storage region comprising at least two different metal oxides having an interface therebetween; forming a second conductive structure over the data storage region; wherein the data storage region is configured to support a filament which provides resistive properties of the memory cell associated with a memory state, the data storage region having a thickness from a surface of the first conductive structure to a surface of the second conductive structure, the metal oxides extending entirely through said thickness; wherein the data storage region comprises multiple portions which are physically different from one another so that at least one of the portions supports a higher resistance segment of said filament and at least one other of the portions supports a lower resistance segment of said filament; wherein the memory cell is formed to have two or more lower resistance segments of said filament, or to have two or more higher resistance segments of said filament; and wherein at least one of the two or more segments of the filament has a substantially different resistance than another of said two or more segments.