Gate-tunable atomically-thin memristors and methods for preparing same and applications of same

摘要

In one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel.

主权项

1. A memristor, comprising:
a substrate having a first surface and an opposite, second surface; a monolayer film formed of an atomically thin material on the first surface of the substrate, wherein the monolayer film has at least one grain boundary (GB); a first electrode and a second electrode spatial-apart formed on the first surface of the substrate and electrically coupled with the monolayer film to define a memristor channel in the monolayer film between the first and second electrodes, such that the at least one GB is located in the memristor channel; and a gate electrode formed on the second surface of the substrate and capacitively coupled with the memristor channel.