发明名称 |
Low temperature system for attaching magnetoresistive random access memory (MRAM) |
摘要 |
A method is provided for electrically coupling a magnetoresistive memory MRAM circuit component to a host component. The method includes keeping the temperature of the MRAM circuit component below about 200° C. while aligning at least one interface feature of the MRAM circuit component with at least one interface feature of the host component and electrically coupling the interface features using a z-axis conductive material. In certain exemplary implementations, the temperature of the magnetoresistive memory circuit component is keep below about 180° C. It has been found that lower temperatures such as these eliminate the need to conduct additional MRAM annealing processes to re-set/re-pin a selected magnetic direction in certain materials within the MRAM.
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申请公布号 |
US6628543(B2) |
申请公布日期 |
2003.09.30 |
申请号 |
US20020361097 |
申请日期 |
2002.10.17 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
STOBBS COLIN ANDREW |
分类号 |
G11C11/15;H05K3/32;(IPC1-7):G11C11/02 |
主分类号 |
G11C11/15 |
代理机构 |
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