| 摘要 |
PROBLEM TO BE SOLVED: To reduce power consumption of a magnetic memory device at the time of write-in an MRAM by concentrating magnetic fluxes to a TMR element, and to increase degree of integration of the device by improving reliability of wiring and suppressing expansion of an occupying area of a write-in word line with respect to a wiring portion. SOLUTION: The magnetic memory device is provided with the write-in word line (first wiring) 11, a bit line (second writing) 12 three-dimensionally intersecting the word line 11, and the TMR element 13 which is electrically insulated from the word line 11, electrically connected to the bit line 12, and is constituted by putting a tunnel insulating layer 303 between ferromagnetic materials at the intersecting area of the lines 11 and 12. The word line 11 is constituted by laminating a first metallic layer 111 composed of a metal having a lower electric resistance than a high-melting point metal has and second metallic layer 112 composed of the high-melting point metal upon another and at least part of the projected portion of the TMR element 13 upon the word line 11 is composed only of the second metallic layer 112. COPYRIGHT: (C)2004,JPO
|
