| 摘要 |
PROBLEM TO BE SOLVED: To enable the area per one capacity element of a semiconductor device, having the capacity element, to be reduced. SOLUTION: The capacity element 19 consisting of a lower electrode 16, a capacity insulating film 17 and an upper electrode 18 is provided to be disposed further on a conductive plug 13 provided on a source diffused region 30a of a MOS transistor 30. The film 17 is formed at the bottom of an opening 15a for exposing an oxygen barrier film 14 provided on a second interlayer insulating film 15 and along a wall surface. As a result, a curved part 17a, curved in the penetrating direction of the plug 13, is formed. COPYRIGHT: (C)2004,JPO
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