| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film semiconductor epitaxial substrate and its manufacturing method by which an influence of the carrier concentration of a subcollector layer on a current amplification factor can be prevented and a highly reliable semiconductor device can be manufactured. SOLUTION: The thin-film semiconductor epitaxial substrate 1 is provided with a subcollector layer 41 and a collector layer 42, and a B-added layer 42A which is added with boron (B) is partially formed in the collector layer 42, thus preventing the reduction of current amplification factor even if the subcollector layer 41 is doped at a high concentration. COPYRIGHT: (C)2004,JPO
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