发明名称 Inductively-coupled plasma processing system
摘要 A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.
申请公布号 US6652711(B2) 申请公布日期 2003.11.25
申请号 US20010875339 申请日期 2001.06.06
申请人 TOKYO ELECTRON LIMITED 发明人 BRCKA JOZEF;DREWERY JOHN;GRAPPERHAUS MICHAEL;LEUSINK GERRIT;REYNOLDS GLYN;VUKOVIC MIRKO;YASAR TUGRUL
分类号 H05H1/46;B01J3/00;B01J19/08;H01J37/32;H01L21/3065;(IPC1-7):C23F1/00;C23C16/00 主分类号 H05H1/46
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