| 摘要 |
PROBLEM TO BE SOLVED: To improve performance in an electronic device by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction, and further, to provide a high-performance electronic device by integrating the device into an IC. SOLUTION: Oxide thin film layers 3, 4 are formed on the inorganic amorphous layer or the organic solid layer 2, and the perovskite-type oxide thin film 5 is grown epitaxially. In this case, the films 3, 4 are capable of being at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and a strontium titanate, the inorganic amorphous layer or the organic solid layer 2 are capable of being silicon oxide, and a piezoelectric or ferroelectric material, for example, is used as the thin film 5. COPYRIGHT: (C)2004,JPO
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