| 发明名称 | Magnetic tunnel junction and 3-D magnetic tunnel junction array | ||
| 摘要 | A magnetic tunnel junction cell includes a first electrode having an axis extending in a direction substantially perpendicular to an active surface of a substrate. The magnetic tunnel junction further includes a fixed layer, a U-shaped free layer, a tunnel layer sandwiched between the fixed layer and the U-shaped free layer and a second electrode embedded in the U-shaped free layer. The fixed layer, the tunnel layer and the U-shaped free layer are disposed between the first electrode and the second electrode and constitute a magnetic tunnel junction. The tunnel layer may also be U-shaped. | ||
| 申请公布号 | US9525126(B1) | 申请公布日期 | 2016.12.20 |
| 申请号 | US201514846960 | 申请日期 | 2015.09.07 |
| 申请人 | Lin Yeu-Chung | 发明人 | Lin Yeu-Chung |
| 分类号 | H01L43/02;H01L43/08;H01L27/22 | 主分类号 | H01L43/02 |
| 代理机构 | Kamrath IP Lawfirm, P.A. | 代理人 | Kamrath Alan D.;Kamrath IP Lawfirm, P.A. |
| 主权项 | 1. An electronic device comprising: a first electrode having an axis extending in a direction substantially perpendicular to an active surface of a substrate; a fixed layer, a U-shaped free layer and a tunnel layer sandwiched between the fixed layer and the U-shaped free layer; a second electrode embedded in the U-shaped free layer, wherein the fixed layer, the tunnel layer and the U-shaped free layer are disposed between the first electrode and the second electrode and constitute a magnetic tunnel junction. | ||
| 地址 | Hsin-Chu TW | ||