| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to form a thin metal fuse and perform a stable repair process at low power by forming a fuse and a metal interconnection having different thicknesses through a sputtering method or an electroplating method when the fuse and the metal interconnection are formed by using a Cu layer or an Au layer with a poor etching characteristic. CONSTITUTION: An interlayer dielectric(35) including a contact hole exposing a portion reserved for a fuse and metal interconnection contact is formed on a semiconductor substrate including a predetermined underlying structure. An adhesion layer and the first metal layer are formed on the resultant structure by a predetermined thickness. An anti-electroplating layer pattern is formed on the first metal layer between contact holes reserved for the fuse. A photoresist layer pattern exposing a portion reserved for the fuse and the metal interconnection(47) including the contact hole is formed on the resultant structure. The second metal layer is formed on the first metal layer to form the fuse and the metal interconnection by using the photoresist layer pattern as an electroplating mask. The first metal layer and the adhesion layer that are exposed by removing the photoresist layer pattern are eliminated to separate the fuse from the metal interconnection. The first passivation layer(49) is formed on the resultant structure. The second passivation layer(51) that exposes the first passivation layer on the fuse is formed on the first passivation layer.
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