发明名称 |
Method for reducing fluorine induced defects on a bonding pad surface |
摘要 |
A method for reducing a fluorine contamination level on a semiconductor wafer process surface including providing a semiconductor wafer surface having a process surface including an uppermost polyimide containing layer; reactive ion etching the process surface to include exposure of the process surface to a hydrofluorocarbon containing plasma; and heating the process surface according to a temperature profile to reduce a fluorine contamination level.
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申请公布号 |
US6660624(B2) |
申请公布日期 |
2003.12.09 |
申请号 |
US20020076891 |
申请日期 |
2002.02.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TZENG JIANN-TYNG;TSAI JIH-REN;WU MICHAEL;CHO CHING-WEN |
分类号 |
H01L21/3105;H01L21/311;H01L21/60;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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