发明名称 Method for reducing fluorine induced defects on a bonding pad surface
摘要 A method for reducing a fluorine contamination level on a semiconductor wafer process surface including providing a semiconductor wafer surface having a process surface including an uppermost polyimide containing layer; reactive ion etching the process surface to include exposure of the process surface to a hydrofluorocarbon containing plasma; and heating the process surface according to a temperature profile to reduce a fluorine contamination level.
申请公布号 US6660624(B2) 申请公布日期 2003.12.09
申请号 US20020076891 申请日期 2002.02.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 TZENG JIANN-TYNG;TSAI JIH-REN;WU MICHAEL;CHO CHING-WEN
分类号 H01L21/3105;H01L21/311;H01L21/60;(IPC1-7):H01L21/44 主分类号 H01L21/3105
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