发明名称 |
Method for manufacturing thin film transistors |
摘要 |
A manufacturing method of a thin film transistor (TFT) having low serial impedance is described. The method uses a back-side exposure and uses the active area as a hard mask; therefore, photomask usage may be reduced. On the other hand, a Si-Ge layer is used to react with the conductive layer deposited thereon after for forming a Ge-salicide layer. The method may reduce the required temperature of forming a Ge-salicide layer and the serial impedance.
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申请公布号 |
US6670224(B2) |
申请公布日期 |
2003.12.30 |
申请号 |
US20020033934 |
申请日期 |
2002.01.03 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LEE CHI-SHEN;CHANG TING-KUO;CHEN PI-FU;KANG YU-MING;DAI YUAN-TUNG |
分类号 |
H01L21/336;H01L29/45;H01L29/49;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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