发明名称 |
Method of forming non-volatile memory having floating trap type device |
摘要 |
A method of forming a non-volatile memory having a floating trap-type device is disclosed in the present invention. In the method, a relatively thick thermal oxide layer is formed at a semiconductor substrate and patterned to leave a thick thermal oxide pattern at a high-voltage region (a high-voltage region defining step). An oxide-nitride-oxide (ONO) layer is formed over substantially the entire surface (the substantial surface) of the semiconductor substrate and patterned to leave an ONO pattern at a cell memory region (a cell memory region defining step). After the high-voltage region defining step and the cell memory region defining step, a thermal oxidizing process is performed with respect to the semiconductor substrate where a low-voltage region is exposed, thereby forming a relatively thin gate insulation layer for a low-voltage type device (a low-voltage region defining region).
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申请公布号 |
US6677200(B2) |
申请公布日期 |
2004.01.13 |
申请号 |
US20020194182 |
申请日期 |
2002.07.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;CHOI JUNG-DAL;HUR SUNG-HOI |
分类号 |
H01L21/28;H01L21/336;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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