| 发明名称 |
ORGANIC MONOLAYER PASSIVATION AND SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICES USING THE SAME |
| 摘要 |
A method for inorganic surface passivation in a photovoltaic device includes etching a native oxide over an inorganic substrate, the inorganic substrate having a surface; and forming an organic monolayer on the surface of the inorganic substrate to form a heterojunction, the organic monolayer having the following formula: ˜X-Y, wherein X is an oxygen or a sulfur; Y is an alkyl chain, an alkenyl chain, or an alkynyl chain; and X covalently bonds to the surface of the inorganic substrate by a covalent bond. |
| 申请公布号 |
US2016380220(A1) |
申请公布日期 |
2016.12.29 |
| 申请号 |
US201514964876 |
申请日期 |
2015.12.10 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Afzali-Ardakani Ali;Hekmatshoartabari Bahman;Shahrjerdi Davood |
| 分类号 |
H01L51/42;H01L51/00 |
主分类号 |
H01L51/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for inorganic surface passivation in a photovoltaic device, the method comprising:
etching a native oxide over an inorganic substrate, the inorganic substrate having a surface; and forming an organic monolayer on the surface of the inorganic substrate to form a heterojunction, the organic monolayer having the following formula:
˜X-Y, wherein X is an oxygen or a sulfur; Y is an alkyl chain, an alkenyl chain, or an alkynyl chain; and X covalently bonds to the surface of the inorganic substrate by a covalent bond. |
| 地址 |
Armonk NY US |
