发明名称 ORGANIC MONOLAYER PASSIVATION AND SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICES USING THE SAME
摘要 A method for inorganic surface passivation in a photovoltaic device includes etching a native oxide over an inorganic substrate, the inorganic substrate having a surface; and forming an organic monolayer on the surface of the inorganic substrate to form a heterojunction, the organic monolayer having the following formula: ˜X—Y, wherein X is an oxygen or a sulfur; Y is an alkyl chain, an alkenyl chain, or an alkynyl chain; and X covalently bonds to the surface of the inorganic substrate by a covalent bond.
申请公布号 US2016380219(A1) 申请公布日期 2016.12.29
申请号 US201514749956 申请日期 2015.06.25
申请人 International Business Machines Corporation 发明人 Afzali-Ardakani Ali;Hekmatshoartabari Bahman;Shahrjerdi Davood
分类号 H01L51/42;H01L51/44;H01L51/00 主分类号 H01L51/42
代理机构 代理人
主权项
地址 Armonk NY US