发明名称 Method of coil preparation for ionized metal plasma process and method of manufacturing integrated circuits
摘要 The present invention provides a method of depositing a film on a surface of a coil that includes depositing a metal from a target onto a surface of a coil to form a first film on the surface and forming a second film over the first film at a low pressure and at a first power at the target that is substantially higher than a first power at the component's surface. The conditioned deposition tool is well suited for manufacturing integrated circuits.
申请公布号 US6699372(B2) 申请公布日期 2004.03.02
申请号 US20010836365 申请日期 2001.04.16
申请人 AGERE SYSTEMS GUARDIAN CORPORATION 发明人 BHOWMIK SIDDHARTHA;MERCHANT SAILESH M.;MINARDI FRANK
分类号 C23C14/32;C23C14/34;C23C14/56;(IPC1-7):C23C14/34 主分类号 C23C14/32
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