发明名称 |
Method of coil preparation for ionized metal plasma process and method of manufacturing integrated circuits |
摘要 |
The present invention provides a method of depositing a film on a surface of a coil that includes depositing a metal from a target onto a surface of a coil to form a first film on the surface and forming a second film over the first film at a low pressure and at a first power at the target that is substantially higher than a first power at the component's surface. The conditioned deposition tool is well suited for manufacturing integrated circuits.
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申请公布号 |
US6699372(B2) |
申请公布日期 |
2004.03.02 |
申请号 |
US20010836365 |
申请日期 |
2001.04.16 |
申请人 |
AGERE SYSTEMS GUARDIAN CORPORATION |
发明人 |
BHOWMIK SIDDHARTHA;MERCHANT SAILESH M.;MINARDI FRANK |
分类号 |
C23C14/32;C23C14/34;C23C14/56;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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