METHOD FOR FORMING POLYSIDE CONTROL GATE OF FLASH MEMORY DEVICE

摘要

PURPOSE: A method for forming a polyside control gate of a flash memory device is provided to be capable of obtaining excellent profile of the control gate without the generation of an undercut phenomenon. CONSTITUTION: A gate oxide layer(102), a floating gate(104), and an inter-gate dielectric layer(106) are sequentially formed at the upper portion of a semiconductor substrate(100). A doped polysilicon layer(120) is deposited on the entire surface of the resultant structure. A polyside layer(140) is completed by forming a silicide layer(130) at the upper portion of the doped polysilicon layer. A hard mask(180) is formed at the upper portion of the polyside layer. The polyside layer is partially etched by supplying etching gas and nitrogen-containing gas using the hard mask as an etching mask.