| 摘要 |
PROBLEM TO BE SOLVED: To provide a resonant tunneling semiconductor device, wherein a flow of electrons by way of a point X is decreased to ensure a high P/V ratio and reduce a temperature dependency. SOLUTION: In the resonant tunneling semiconductor device, both sides of a well layer 1 of at least one layer are pinched between a pair of barrier layers. At least one of the pair of barrier layers of the device is constituted of the barrier layer of at least two layers containing a first barrier layer 2 having a bottom of a conductive band energy at a point except for a pointΓand a second barrier layer 3 having a different height in the bottom of the conductive band energy at a point except for the pointΓ. COPYRIGHT: (C)2004,JPO |
