发明名称 HIGH-RESOLUTION PHOTORESIST STRUCTURING OF MULTI-LAYER STRUCTURES DEPOSITED ONTO SUBSTRATES
摘要 For fabricating a multi-layer structure of m 2 layers deposited on a substrate, a radiation irradiated by structure elements themselves is used for the lithographic exposure of a covering layer thus to achieve spatial self-alignment between the different layers. In a first step, a first layer is deposited onto the substrate. In a next step, the first layer is structured into structure elements. In a further step, a second layer of a material, which is sensitive to a physical and/or chemical interaction appropriate for an image transfer from the structure elements into the second layer, is deposited onto the substrate. The second layer is exposed with a pre-mentioned interaction originated or modulated by the structure elements. Finally, the exposed or non-exposed material of the second layer is removed from the substrate thus revealing the second layer structured in accordance with said image transfer.
申请公布号 KR20040024545(A) 申请公布日期 2004.03.20
申请号 KR20037010417 申请日期 2003.08.07
申请人 发明人
分类号 G02B5/20;G03F7/00;G03F7/20;H01L51/50;H05B33/10;H05B33/14 主分类号 G02B5/20
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