| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly integrated high-speed nonvolatile memory of small power consumption and low power in writing. SOLUTION: Compared with read data GO read out by a data encoder WC from a memory cell array in write operation, input data DI are encoded to be data GI, and the read data GO are decoded by a data decoder RD to be output data DO. In a nonvolatile semiconductor memory for writing data into a memory cell by flowing current through a data line, power consumption can be reduced by reducing the number of bits for writing in the write operation. Thus, an MRAM having a highly integrated memory with low power consumption can be realized. COPYRIGHT: (C)2004,JPO |
