发明名称 |
Memory device structure with composite buried and raised bit line |
摘要 |
The present invention provides a memory structure, comprising: a substrate; a gate oxide layer disposed on a portion of the substrate; a gate structure disposed on the gate oxide layer; a buried bit line disposed in the substrate along both sides of the gate structures; a raised line disposed on the burled bit line; an isolating spacer disposed on both sidewalls of the gate structure and a word line disposed over the substrate in a direction perpendicular to the buried bit line; and an insulation layer disposed on a top of the raised line to electrically isolate the raised line and the word line. |
申请公布号 |
US6710381(B1) |
申请公布日期 |
2004.03.23 |
申请号 |
US20020065355 |
申请日期 |
2002.10.08 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HUANG WENG-HSING;CHANG KENT KUOHUA |
分类号 |
H01L21/8239;H01L27/105;H01L27/115;(IPC1-7):H01L29/749 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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