发明名称 MANUFACTURING METHOD FOR SILICON DEVICE, MANUFACTURING METHOD FOR LIQUID JET HEAD, AND LIQUID JET HEAD
摘要 PROBLEM TO BE SOLVED: To provide a method for making a silicon device and a method for making a liquid jet head unerringly preventing a breakage of a piezoelectric device during manufacturing. SOLUTION: The silicon device is manufactured by forming a first steam permeation prevention pattern 130 by forming a first moisture permeation prevention layer 96 that is the same layer as a first conducting layer 96 and continuous as if to surround the entire thin film pattern of the silicon wafer 100 on a silicon wafer 100, forming a second moisture permeation prevention layer 114 that is the same layer as an insulating layer 110 and narrower than the first moisture permeation prevention layer 96 on the first moisture permeation prevention layer 96 and forming a third moisture permeation prevention layer 121 that is the same layer as a second conducting layer 120 and as if to cover the second moisture permeation prevention layer 114 on the second moisture permeation prevention layer 114, and subsequently, joining a sealing substrate to the silicon wafer 100 through the moisture permeation prevention pattern 130 and a recess by etching from the other side of the silicon wafer 100 when the thin film pattern is formed on one side of the silicon wafer 100. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004090637(A) 申请公布日期 2004.03.25
申请号 JP20030286756 申请日期 2003.08.05
申请人 SEIKO EPSON CORP 发明人 MIYATA YOSHINAO
分类号 B05B1/14;B41J2/045;B41J2/055;B41J2/16;(IPC1-7):B41J2/16 主分类号 B05B1/14
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