| 发明名称 |
METHOD AND APPARATUS FOR HEAT TREATMENT |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and apparatus for heat treatment for accurately measuring variation in a resistance value in a plane of a wafer by a four-probe method after heat treatment. <P>SOLUTION: A heat treatment apparatus 10 comprises a reactive chamber 1 in which a wafer W is placed and thermally treated in a hydrogen atmosphere, and a transportation means 3 which carries the wafer W out of the reactive changer 1 using a wafer holder 33 which holds the wafer W by contacting to a part of the main surface of the wafer W after thermal treatment. A heating means 6 heats the wafer holder 33. <P>COPYRIGHT: (C)2004,JPO</p> |
| 申请公布号 |
JP2004095846(A) |
申请公布日期 |
2004.03.25 |
| 申请号 |
JP20020254833 |
申请日期 |
2002.08.30 |
| 申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
FUJIYA SHOICHI;YAGI SHINICHIRO |
| 分类号 |
B65G49/07;C23C16/46;H01L21/205;H01L21/26;H01L21/66;H01L21/677;H01L21/68;(IPC1-7):H01L21/205 |
主分类号 |
B65G49/07 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
