发明名称 SURFACE ACOUSTIC WAVE APPARATUS AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a surface acoustic wave (SAW) apparatus in which deterioration of characteristics caused by unwanted ripple is suppressed by sufficiently enlarging the reflection coefficient of an IDT in the SAW apparatus equipped with a structure formed with an insulating layer to cover an IDT electrode. SOLUTION: In the SAW apparatus, a first insulating layer 2 is formed on the entire surface of a piezoelectric LiTaO<SB>3</SB>substrate. By using a resist pattern 3 used for forming the IDT electrode, the first insulating layer 2 in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or of an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form an IDT electrode 4A. The resist pattern remaining on the first insulating layer is removed. A second insulating layer 6 is formed to cover the first insulating layer 2 and the IDT electrode 4A. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004112748(A) 申请公布日期 2004.04.08
申请号 JP20030041480 申请日期 2003.02.19
申请人 MURATA MFG CO LTD 发明人 KADOTA MICHIO;NAKAO TAKESHI;NISHIYAMA KENJI
分类号 H03H3/08;H03H3/10;H03H9/02;H03H9/145;H03H9/25;H03H9/64;(IPC1-7):H03H9/145 主分类号 H03H3/08
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