| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that an SOI (silicon on insulator) type semiconductor device cannot cope with a transistor making a source/drain region and a channel region different potential, and can cope with only one of two kinds of power source wiring. SOLUTION: The semiconductor device has a low resistant wiring layer 13 extended to be embedded in a substrate, and a plurality of element regions 14 formed to be mutually separated while they are brought into contact with the embedded wiring layer 13. The circuit element is formed in each element region. The embedded wiring layer preferably uses a metal. COPYRIGHT: (C)2004,JPO |
