| 摘要 |
In a method for manufacturing an integrated memory circuit, a semiconductor substrate having a front side and a rear side is provided first. The semiconductor substrate is processed on the front side and on the rear side to produce memory cells on the front side and memory cells on the rear side of the semiconductor substrate. Finally, defective memory cells on one side of the semiconductor substrate are replaced by operational memory cells on the other side of the semiconductor substrate by connecting the operational memory cells of the one side of the semiconductor substrate to an input/output circuit of the memory circuit. By loading the semiconductor substrate on both sides, it is possible to either considerably reduce the rejection rate of memory chips or to strongly reduce the chip area of a memory chip or to increase the number of memory cells per specified chip area. |
