发明名称 |
Method and apparatus for run-to-run control of trench profiles |
摘要 |
A method and an apparatus are provided for performing run-to-run control of trench profiles. At least one semiconductor wafer is processed. A trench metrology data from the processed semiconductor wafer is acquired. Data relating to at least one process chamber characteristic is acquired while processing the semiconductor wafer. A chamber characteristic adjustment process is performed in response to the trench metrology data and the data relating to the processing chamber characteristic. A feedback adjustment of the processing chamber characteristic is performed in response to the chamber characteristic adjustment process.
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申请公布号 |
US6728591(B1) |
申请公布日期 |
2004.04.27 |
申请号 |
US20010920098 |
申请日期 |
2001.08.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUSSEY, JR. JAMES H.;PURDY MATTHEW A. |
分类号 |
H01L21/00;(IPC1-7):G06F19/00 |
主分类号 |
H01L21/00 |
代理机构 |
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主权项 |
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地址 |
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