Cobalt silicide formation method employing wet chemical silicon substrate oxidation

摘要

A method for forming a cobalt silicide layer employs a sequential treatment of a silicon substrate with a hydrofluoric acid material followed by a wet chemical oxidant material. A cobalt material layer is then formed upon the sequentially treated silicon substrate and the silicon substrate/cobalt material layer laminate is thermally annealed to form a cobalt silicide layer. Use of the wet chemical oxidant material for treating the silicon substrate provides the cobalt silicide layer with enhanced electrical properties.