| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus and its manufacturing method, wherein lowering of a COD level is reduced, and the reliability of a laser device is high, and further an end surface protective film is formed thereon. SOLUTION: The semiconductor laser apparatus includes an oxidized silicon film, formed in contact with at least one end of a semiconductor laser crystal as the end surface protective film of the semiconductor laser device. For example, the apparatus includes an oxidized silicon film 100a, formed in contact with a main exit surface side 1a of a laser chip 1. The refractive index of such an oxidized silicon film is preferably 1.6 or larger. It is also possible to form another film outside the oxidized silicon film. Further, the oxidized silicon film is preferably formed, using a resistance heating deposition method. COPYRIGHT: (C)2004,JPO
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