| 摘要 |
PROBLEM TO BE SOLVED: To planarize the surface of a laminate formed by an organic metal vapor-phase growth. SOLUTION: Use is made, for a manufacturing process for a laminate consisting of a GaN channel layer and an Al<SB>0.2</SB>Ga<SB>0.8</SB>N electron supply layer, of: a structure-forming process, where the GaN channel layer 20, the Al<SB>0.2</SB>Ga<SB>0.8</SB>N electron supply layer 22, and a GaN layer 26 are successively provided on a sapphire substrate 12 under the predetermined high temperature by an organic metal vapor-phase growing method, to form a structure 50; a cooling process, where the structure is cooled up to a predetermined temperature; and a third semiconductor layer removing process, where the GaN layer is removed to expose the Al<SB>0.2</SB>Ga<SB>0.8</SB>N electron supply layer. COPYRIGHT: (C)2004,JPO
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