| 摘要 |
PROBLEM TO BE SOLVED: To improve the picture quality of a solid-state image pickup device by preventing the leaking in of improper light by effectively shielding an FD from the light at the time of forming each pixel circuit of an image pickup pixel section by using a CMOS process. SOLUTION: The gate wiring layer (electrode film) of each transistor formed in the CMOS process is doubled and, in a pixel Tr in the vicinity of a PD 219, the gate electrodes of a transfer Tr 211 and a reset Tr 214 are formed by using the lower gate electrode film and the upper gate electrode film is utilized for the light shielding film of the FD 216. In addition, the light shielding film is used as the gate electrode of an amplifier TR 212 by extending the film and the potential fluctuation of the FD 216 is transmitted to the gate of the amplifier Tr 212. A high-melting point metallic silicide, such as the tungsten silicide, cobalt silicide, etc., having a high light shielding property is used as the material of the upper gate wiring layer used as the light shielding film. COPYRIGHT: (C)2004,JPO
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