Method of forming low dielectric constant insulation film for semiconductor device

摘要

A thin film having a low dielectric constant is formed on a semiconductor substrate by plasma reaction using a method including the steps of: (i) introducing a reaction gas into a reaction chamber for plasma CVD processing wherein a semiconductor substrate is placed on a lower stage; and (ii) forming a thin film on the substrate by plasma reaction while reducing or discharging an electric charge from the substrate surface. The discharging can be conducted by forming in the reaction chamber a upper region for plasma excitation and a lower region for film formation on the substrate wherein substantially no electric potential is applied in the lower region to suppress plasma excitation. An intermediate electrode is used to divide the interior of the reaction chamber into the upper region and the lower region. The discharge can also be conducted by lowering the temperature of the lower stage to condense moisture molecules on the substrate surface. Small nanoparticles can dispose on the substrate without interference with an electric charge.